A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter

Kyotani, Chiharu; Takaaki, Ibuchi; Funaki, Tsuyoshi; Miyazaki, Tatsuya; Okawauchi, Yuta; Nakahara, Ken

doi:https://doi.org/10.1109/PEDG48541.2020.9244460

A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter

Kyotani, Chiharu; Takaaki, Ibuchi; Funaki, Tsuyoshi et al.

2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2020, 2020, 435-440

Number of Access:197（2025-05-24 13:52 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78284

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Title	A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter
Creator	CreatorName Kyotani, Chiharu
	CreatorName Takaaki, Ibuchi
	NRID 1000020263220 1000020263220 ORCID 0000-0001-8776-5118 0000-0001-8776-5118 researchmap permalink FunakiTsuyoshi FunakiTsuyoshi Scopus Author ID 7005435048 7005435048 CreatorName Funaki, Tsuyoshi
	CreatorName Miyazaki, Tatsuya
	CreatorName Okawauchi, Yuta
	CreatorName Nakahara, Ken
Subject	conducted EMI
	parasitic inductance
	PEEC method
	SiC Poewer Module
Description	C. Kyotani, I. Takaaki, T. Funaki, T. Miyazaki, Y. Okawauchi and K. Nakahara, "A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter," 2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Dubrovnik, Croatia, 2020, pp. 435-440, doi: 10.1109/PEDG48541.2020.9244460.
Abstract	Silicon Carbide (SiC) power semiconductor devices achieve low switching losses with fast switching operation and miniaturized power conversion circuit. SiC power module for high voltage and large current is subject to large di/dt and dv/dt in switching transient. Large di/dt induces surge voltage and ringing oscillation by interacting with circuit parasitic inductance and capacitance. These are fatal factors for electromagnetic interference (EMI) of the circuit. This report studies modeling of parasitic inductance in SiC power module based on three-dimensional (3-D) electromagnetic analysis to realize low EMI design for power conversion circuit. The developed Partial Equivalent Element Circuit (PEEC) model of SiC power module is applied to circuit analysis. The simulated time response of voltage/current in switching operation and frequency spectrum of the conducted EMI for the tested converter agree with the measurement result well.
Publisher	Institute of Electrical and Electronics Engineers Inc.
Source Title	2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2020
Page	435-440
Date of Issued	2020-09-28
Language	English
Handle URL	https://hdl.handle.net/11094/78284
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1109/PEDG48541.2020.9244460
Access Rights	open access
CopyRight	© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
oaire:version	Accepted Manuscript
Category	会議発表論文 Conference Paper

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Resource Type	conference paper
Local Type	Conference Paper
DCMI Type	Text
DCTERMS.bibliographicCitation	2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2020. 2020, p. 435-440
DC.title	A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter
DC.creator	Kyotani, Chiharu
	Takaaki, Ibuchi
	Funaki, Tsuyoshi
	Miyazaki, Tatsuya
	Okawauchi, Yuta
	Nakahara, Ken
DC.publisher	Institute of Electrical and Electronics Engineers Inc.
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2020-09-28
DC.identifier	https://doi.org/10.1109/PEDG48541.2020.9244460
DC.subject	conducted EMI
	parasitic inductance
	PEEC method
	SiC Poewer Module
DC.description	C. Kyotani, I. Takaaki, T. Funaki, T. Miyazaki, Y. Okawauchi and K. Nakahara, "A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter," 2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Dubrovnik, Croatia, 2020, pp. 435-440, doi: 10.1109/PEDG48541.2020.9244460.
DCTERMS.abstract	Silicon Carbide (SiC) power semiconductor devices achieve low switching losses with fast switching operation and miniaturized power conversion circuit. SiC power module for high voltage and large current is subject to large di/dt and dv/dt in switching transient. Large di/dt induces surge voltage and ringing oscillation by interacting with circuit parasitic inductance and capacitance. These are fatal factors for electromagnetic interference (EMI) of the circuit. This report studies modeling of parasitic inductance in SiC power module based on three-dimensional (3-D) electromagnetic analysis to realize low EMI design for power conversion circuit. The developed Partial Equivalent Element Circuit (PEEC) model of SiC power module is applied to circuit analysis. The simulated time response of voltage/current in switching operation and frequency spectrum of the conducted EMI for the tested converter agree with the measurement result well.
DC.rights	© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
DC.format	78284
citation_title	A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter
citation_author	Kyotani, Chiharu
	Takaaki, Ibuchi
	Funaki, Tsuyoshi
	Miyazaki, Tatsuya
	Okawauchi, Yuta
	Nakahara, Ken
citation_publisher	Institute of Electrical and Electronics Engineers Inc.
citation_language	English
citation_date	2020-09-28
citation_journal_title	2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2020
citation_firstpage	435
citation_lastpage	440
citation_doi	https://doi.org/10.1109/PEDG48541.2020.9244460
citation_public_url	https://hdl.handle.net/11094/78284