A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter

Kyotani, Chiharu; Takaaki, Ibuchi; Funaki, Tsuyoshi et al.

2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2020, 2020, 435-440

Number of Access:459（2025-08-15 01:09 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78284

Link to primary information 

File Format Terms of use Size Views Date.Available Description information
IEEEpedg_2020_435 pdf None 1.39 MB 279 2021.01.15  

Item Information

Output File Export EndNote Basic Export Mendeley

Title
A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter
Creator
CreatorName
Kyotani, Chiharu
CreatorName
Takaaki, Ibuchi
NRID
1000020263220 1000020263220
ORCID
0000-0001-8776-5118 0000-0001-8776-5118
researchmap permalink
FunakiTsuyoshi FunakiTsuyoshi
Scopus Author ID
7005435048 7005435048
CreatorName
Funaki, Tsuyoshi
CreatorName
Miyazaki, Tatsuya
CreatorName
Okawauchi, Yuta
CreatorName
Nakahara, Ken
Subject
conducted EMI
parasitic inductance
PEEC method
SiC Poewer Module
Description
C. Kyotani, I. Takaaki, T. Funaki, T. Miyazaki, Y. Okawauchi and K. Nakahara, "A Study on Equivalent Circuit Modeling of Wiring Inductance in SiC Power Module for Predicting Conducted EMI of Power Converter," 2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Dubrovnik, Croatia, 2020, pp. 435-440, doi: 10.1109/PEDG48541.2020.9244460.
Abstract
Silicon Carbide (SiC) power semiconductor devices achieve low switching losses with fast switching operation and miniaturized power conversion circuit. SiC power module for high voltage and large current is subject to large di/dt and dv/dt in switching transient. Large di/dt induces surge voltage and ringing oscillation by interacting with circuit parasitic inductance and capacitance. These are fatal factors for electromagnetic interference (EMI) of the circuit. This report studies modeling of parasitic inductance in SiC power module based on three-dimensional (3-D) electromagnetic analysis to realize low EMI design for power conversion circuit. The developed Partial Equivalent Element Circuit (PEEC) model of SiC power module is applied to circuit analysis. The simulated time response of voltage/current in switching operation and frequency spectrum of the conducted EMI for the tested converter agree with the measurement result well.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Source Title
2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2020
Page
435-440
Date of Issued
2020-09-28
Language
English
Handle URL
https://hdl.handle.net/11094/78284
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.1109/PEDG48541.2020.9244460
Access Rights
open access
CopyRight
© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
oaire:version
Accepted Manuscript
Category
会議発表論文 Conference Paper