Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Masunaga, Masahiro; Crescitelli, Viviana; Funaki, Tsuyoshi

Japanese Journal of Applied Physics, 2020, 59(10), 104005

Number of Access:371（2025-08-14 00:38 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78287

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Title
Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment
Creator
CreatorName
Masunaga, Masahiro
CreatorName
Crescitelli, Viviana
NRID
1000020263220 1000020263220
ORCID
0000-0001-8776-5118 0000-0001-8776-5118
researchmap permalink
FunakiTsuyoshi FunakiTsuyoshi
Scopus Author ID
7005435048 7005435048
CreatorName
Funaki, Tsuyoshi
Description
This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/abbb1f.
Abstract
Long-term thermal stability of specific contact resistance (ρc) in cross-bridge Kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni₂Si/4H-SiC layered structure, was studied. In high-temperature-storage tests at 500 °C, ρc of p-type SiC increased after it decreased to 1/100 from its initial value; however, in high-temperature-storage tests at 300 °C, it was stable up to 1000 h. The initial decline of ρc was due to the formation of titanium-silicide alloy, whose barrier height is lower than that of the Ni₂Si phase. It was found that ρc increased when the aluminum electrode disappeared because aluminum displaced silicon in the silicon-dioxide layer. In thermal-shock tests (-40 °C/300 °C), ρc hardly changed up to 2000 cycles, and that trend was constant regardless of SiC carrier type. In both tests, almost no thermal deterioration of ρc around 300 °C was observed even in air, so it is concluded that the CBKR structure is robust enough for installation in a high-temperature environment such as a nuclear power plant under decommissioning.
Publisher
IOP Publishing
Source Title
Japanese Journal of Applied Physics
Volume (Issue)
59(10)
Page
104005
Date of Issued
2020-10
Language
English
Handle URL
https://hdl.handle.net/11094/78287
PISSN
00214922
eISSN
13474065
NCID
AA12295836
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.35848/1347-4065/abbb1f
Access Rights
open access
CopyRight
The full-text file will be made open to the public on 9 October 2021 in accordance with the publisher's policy.
This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence.
oaire:version
Accepted Manuscript
Category
学術雑誌論文 Journal Article