Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Fujita, Eigo; Sometani, Mitsuru; Hatakeyama, Tetsuo; Harada, Shinsuke; Yano, Hiroshi; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

doi:https://doi.org/10.1063/1.5034048

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Fujita, Eigo; Sometani, Mitsuru; Hatakeyama, Tetsuo et al.

AIP Advances, 2018, 8(8), 085305

Number of Access:1,076（2025-08-19 00:56 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/85477

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Title	Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
Creator	CreatorName Fujita, Eigo
	NRID 1000060783644 1000060783644 CreatorName Sometani, Mitsuru
	CreatorName Hatakeyama, Tetsuo
	NRID 1000020392649 1000020392649 CreatorName Harada, Shinsuke
	NRID 1000040335485 1000040335485 CreatorName Yano, Hiroshi
	NRID 1000090452466 1000090452466 CreatorName Hosoi, Takuji
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Description	Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, "Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements", AIP Advances 8, 085305 (2018) https://doi.org/10.1063/1.5034048.
Abstract	Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (_{μFE}) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe _μFE degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO_2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces.
Publisher	American Institute of Physics
Source Title	AIP Advances
Volume (Issue)	8(8)
Page	085305
Date of Issued	2018-08
Language	English
Handle URL	https://hdl.handle.net/11094/85477
eISSN	21583226
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.5034048
Access Rights	open access
CopyRight	© 2018 Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	AIP Advances. 2018, 8(8), p. 085305
DC.title	Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
DC.creator	Fujita, Eigo
	Sometani, Mitsuru
	Hatakeyama, Tetsuo
	Harada, Shinsuke
	Yano, Hiroshi
	Hosoi, Takuji
	Shimura, Takayoshi
	Watanabe, Heiji
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2018-08
DC.identifier	https://doi.org/10.1063/1.5034048
DC.description	Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe, "Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements", AIP Advances 8, 085305 (2018) https://doi.org/10.1063/1.5034048.
DCTERMS.abstract	Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (_{μFE}) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe _μFE degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO_2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces.
DC.rights	© 2018 Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	85477
citation_title	Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
citation_author	Fujita, Eigo
	Sometani, Mitsuru
	Hatakeyama, Tetsuo
	Harada, Shinsuke
	Yano, Hiroshi
	Hosoi, Takuji
	Shimura, Takayoshi
	Watanabe, Heiji
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2018-08
citation_journal_title	AIP Advances
citation_volume	8
citation_issue	8
citation_firstpage	085305
citation_doi	https://doi.org/10.1063/1.5034048
citation_public_url	https://hdl.handle.net/11094/85477

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

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