Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

Chanthaphan, Atthawut; Hosoi, Takuji; Shimura, Takayoshi et al.

AIP Advances, 2015, 5(9), 097134

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Identifier to cite or link to this item: https://hdl.handle.net/11094/85478

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Title
Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
Creator
CreatorName
Chanthaphan, Atthawut
NRID
1000090452466 1000090452466
CreatorName
Hosoi, Takuji
NRID
1000090252600 1000090252600
ORCID
0000-0002-8859-7010 0000-0002-8859-7010
researchmap permalink
read0042803 read0042803
Scopus Author ID
35510328800 35510328800
CreatorName
Shimura, Takayoshi
NRID
1000090379115 1000090379115
ORCID
0000-0002-7916-3093 0000-0002-7916-3093
researchmap permalink
heijiw heijiw
Scopus Author ID
7410305922 7410305922
CreatorName
Watanabe, Heiji
Description
Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe, "Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas", AIP Advances 5, 097134 (2015) https://doi.org/10.1063/1.4930980.
Abstract
An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N_2 ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO_2/SiC interfaces. Although N_2-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N_2-POA was achieved under certain conditions, i.e., thin SiO_2 layers (< 15 nm) and high annealing temperatures (>1350°C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N_2-POA revealed the same evidence of slow trap passivation and fast trap generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions.
Publisher
American Institute of Physics
Source Title
AIP Advances
Volume (Issue)
5(9)
Page
097134
Date of Issued
2015-09
Language
English
Handle URL
https://hdl.handle.net/11094/85478
eISSN
21583226
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1063/1.4930980
Access Rights
open access
CopyRight
© 2015 Author(s). This article is licensed under a Creative Commons Attribution 3.0 Unported License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article