Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Hosoi, Takuji; Kutsuki, Katsuhiro; Okamoto, Gaku; Saito, Marina; Shimura, Takayoshi; Watanabe, Heiji

doi:https://doi.org/10.1063/1.3143627

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Hosoi, Takuji; Kutsuki, Katsuhiro; Okamoto, Gaku et al.

Applied Physics Letters, 2009, 94(20), 202112

Number of Access:167（2025-05-11 14:29 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/85485

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Title	Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
Creator	NRID 1000090452466 1000090452466 CreatorName Hosoi, Takuji
	CreatorName Kutsuki, Katsuhiro
	CreatorName Okamoto, Gaku
	CreatorName Saito, Marina
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Description	Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Marina Saito, Takayoshi Shimura and Heiji Watanabe, "Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices", Appl. Phys. Lett. 94, 202112 (2009) https://doi.org/10.1063/1.3143627.
Abstract	Improvement in electrical properties of thermally grown GeO_2/Ge metal-oxide-semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (V_{FB}) shift, small hysteresis, and minimized minority carrier response in capacitance-voltage (C-V) characteristics, has been demonstrated by in situ low temperature vacuum annealing prior to gate electrode deposition. Thermal desorption analysis has revealed that not only water but also hydrocarbons are easily infiltrated into GeO_2 layers during air exposure and desorbed at around 300 °C, indicating that organic molecules within GeO_2/Ge MOS structures are possible origins of electrical defects. The inversion capacitance, indicative of minority carrier generation, increases with air exposure time for Au/ GeO_2/Ge MOS capacitors, while maintaining an interface state density (D_{it}) of about a few 10^{11} cm^{-2}eV^{-1}. Unusual increase in inversion capacitance was found to be suppressed by Al_2O_3 capping (Au/Al_2O_3/GeO_2/Ge structures). This suggests that electrical defects induced outside the Au electrode by infiltrated molecules may enhance the minority carrier generation, and thus acting as a minority carrier source just like MOS field-effect transistors.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	94(20)
Page	202112
Date of Issued	2009-05-18
Language	English
Handle URL	https://hdl.handle.net/11094/85485
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.3143627
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.3143627.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2009, 94(20), p. 202112
DC.title	Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
DC.creator	Hosoi, Takuji
	Kutsuki, Katsuhiro
	Okamoto, Gaku
	Saito, Marina
	Shimura, Takayoshi
	Watanabe, Heiji
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2009-05-18
DC.identifier	https://doi.org/10.1063/1.3143627
DC.description	Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Marina Saito, Takayoshi Shimura and Heiji Watanabe, "Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices", Appl. Phys. Lett. 94, 202112 (2009) https://doi.org/10.1063/1.3143627.
DCTERMS.abstract	Improvement in electrical properties of thermally grown GeO_2/Ge metal-oxide-semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (V_{FB}) shift, small hysteresis, and minimized minority carrier response in capacitance-voltage (C-V) characteristics, has been demonstrated by in situ low temperature vacuum annealing prior to gate electrode deposition. Thermal desorption analysis has revealed that not only water but also hydrocarbons are easily infiltrated into GeO_2 layers during air exposure and desorbed at around 300 °C, indicating that organic molecules within GeO_2/Ge MOS structures are possible origins of electrical defects. The inversion capacitance, indicative of minority carrier generation, increases with air exposure time for Au/ GeO_2/Ge MOS capacitors, while maintaining an interface state density (D_{it}) of about a few 10^{11} cm^{-2}eV^{-1}. Unusual increase in inversion capacitance was found to be suppressed by Al_2O_3 capping (Au/Al_2O_3/GeO_2/Ge structures). This suggests that electrical defects induced outside the Au electrode by infiltrated molecules may enhance the minority carrier generation, and thus acting as a minority carrier source just like MOS field-effect transistors.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.3143627.
DC.format	85485
citation_title	Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
citation_author	Hosoi, Takuji
	Kutsuki, Katsuhiro
	Okamoto, Gaku
	Saito, Marina
	Shimura, Takayoshi
	Watanabe, Heiji
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2009-05-18
citation_journal_title	Applied Physics Letters
citation_volume	94
citation_issue	20
citation_firstpage	202112
citation_doi	https://doi.org/10.1063/1.3143627
citation_public_url	https://hdl.handle.net/11094/85485

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

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