Charge trapping properties in TiO2/HfSiO/SiO2 gate stacks probed by scanning capacitance microscopy

Naitou, Y.; Arimura, H.; Kitano, N.; Horie, S.; Minami, T.; Kosuda, M.; Ogiso, H.; Hosoi, T.; Shimura, T.; Watanabe, H.

doi:https://doi.org/10.1063/1.2828863

Charge trapping properties in TiO2/HfSiO/SiO2 gate stacks probed by scanning capacitance microscopy

Naitou, Y.; Arimura, H.; Kitano, N. et al.

Applied Physics Letters, 2008, 92(1), 012112

Number of Access:1,077（2025-08-18 23:03 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/85486

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Title	Charge trapping properties in TiO2/HfSiO/SiO2 gate stacks probed by scanning capacitance microscopy
Creator	CreatorName Naitou, Y.
	CreatorName Arimura, H.
	CreatorName Kitano, N.
	CreatorName Horie, S.
	CreatorName Minami, T.
	CreatorName Kosuda, M.
	CreatorName Ogiso, H.
	NRID 1000090452466 1000090452466 CreatorName Hosoi, T.
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, T.
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, H.
Description	Y. Naitou, H. Arimura, N. Kitano, S. Horie, H. Ogiso, T. Hosoi, T. Shimura and H. Watanabe, "Charge trapping properties in TiO_2/HfSiO/SiO_2 gate stacks probed by scanning capacitance microscopy", Appl. Phys. Lett. 92, 012112 (2008) https://doi.org/10.1063/1.2828863.
Abstract	The charge-trapping properties of the high-permittivity titanium oxide-hafnium silicate-silicon dioxide (TiO_2/HfSiO/SiO_2) gate stacks have been studied using scanning capacitance microscopy. From the bias stress examination of the gate stacks, we concluded that there were electron traps within the films, and these trap densities increased with an increase in the oxidation temperature used for the fabrication of TiO_2 top dielectrics. Furthermore, we found that the distribution of these charged defects was inhomogeneous within the gate stacks. These results are attributed to Ti diffusion through the dielectric layers, which caused electrical defects within the gate stacks.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	92(1)
Page	012112
Date of Issued	2008-01-07
Language	English
Handle URL	https://hdl.handle.net/11094/85486
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.2828863
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2828863.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2008, 92(1), p. 012112
DC.title	Charge trapping properties in TiO2/HfSiO/SiO2 gate stacks probed by scanning capacitance microscopy
DC.creator	Naitou, Y.
	Arimura, H.
	Kitano, N.
	Horie, S.
	Minami, T.
	Kosuda, M.
	Ogiso, H.
	Hosoi, T.
	Shimura, T.
	Watanabe, H.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2008-01-07
DC.identifier	https://doi.org/10.1063/1.2828863
DC.description	Y. Naitou, H. Arimura, N. Kitano, S. Horie, H. Ogiso, T. Hosoi, T. Shimura and H. Watanabe, "Charge trapping properties in TiO_2/HfSiO/SiO_2 gate stacks probed by scanning capacitance microscopy", Appl. Phys. Lett. 92, 012112 (2008) https://doi.org/10.1063/1.2828863.
DCTERMS.abstract	The charge-trapping properties of the high-permittivity titanium oxide-hafnium silicate-silicon dioxide (TiO_2/HfSiO/SiO_2) gate stacks have been studied using scanning capacitance microscopy. From the bias stress examination of the gate stacks, we concluded that there were electron traps within the films, and these trap densities increased with an increase in the oxidation temperature used for the fabrication of TiO_2 top dielectrics. Furthermore, we found that the distribution of these charged defects was inhomogeneous within the gate stacks. These results are attributed to Ti diffusion through the dielectric layers, which caused electrical defects within the gate stacks.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.2828863.
DC.format	85486
citation_title	Charge trapping properties in TiO2/HfSiO/SiO2 gate stacks probed by scanning capacitance microscopy
citation_author	Naitou, Y.
	Arimura, H.
	Kitano, N.
	Horie, S.
	Minami, T.
	Kosuda, M.
	Ogiso, H.
	Hosoi, T.
	Shimura, T.
	Watanabe, H.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2008-01-07
citation_journal_title	Applied Physics Letters
citation_volume	92
citation_issue	1
citation_firstpage	012112
citation_doi	https://doi.org/10.1063/1.2828863
citation_public_url	https://hdl.handle.net/11094/85486

Charge trapping properties in TiO2/HfSiO/SiO2 gate stacks probed by scanning capacitance microscopy

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