Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

Kita, Yuki; Yoshida, Shinichi; Hosoi, Takuji; Shimura, Takayoshi; Shiraishi, Kenji; Nara, Yasuo; Yamada, Keisaku; Watanabe, Heiji

doi:https://doi.org/10.1063/1.3103314

Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

Kita, Yuki; Yoshida, Shinichi; Hosoi, Takuji et al.

Applied Physics Letters, 2009, 94(12), 122905

Number of Access:1,142（2025-08-18 23:03 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/85488

Link to primary information

File	Format	Terms of use	Size	Views	Date.Available	Description	information
65336_1	pdf	None	671 KB	132	2022.01.11

Item Information

Output File Export EndNote Basic Export Mendeley

Title	Systematic study on work-function-shift in metal/Hf-based high-k gate stacks
Creator	CreatorName Kita, Yuki
	CreatorName Yoshida, Shinichi
	NRID 1000090452466 1000090452466 CreatorName Hosoi, Takuji
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	CreatorName Shiraishi, Kenji
	CreatorName Nara, Yasuo
	CreatorName Yamada, Keisaku
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Description	Yuki Kita, Shinichi Yoshida, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, Keisaku Yamada and Heiji Watanabe , "Systematic study on work-function-shift in metal/Hf-based high-k gate stacks", Appl. Phys. Lett. 94, 122905 (2009) https://doi.org/10.1063/1.3103314.
Abstract	Change in the work function (WF) of the gate electrode material caused by the contact with Hf-based high- k gate dielectrics was investigated by means of the flat-band voltage (V_{fb}) shift in capacitance-voltage curves, and the interface dipole, which modifies the WF, was characterized by x-ray photoelectron spectroscopy. We observed a negative V_{fb} shift and corresponding interface dipole, which suggest the formation of oxygen vacancy (V_O) in the Hf-based oxides. In contrast, we observed an opposite (positive) V_{fb} shift and interface dipole when Au electrodes were formed on cleaned Hf-based dielectrics. This indicates that Au-Hf bond hybridization at the Au/HfSiON interface also causes effective WF modulation, as theoretically predicted by Shiraishi et al. (Tech. - Dig. Int. Electron Devices Meet. 2005, 43).
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	94(12)
Page	122905
Date of Issued	2009-03-23
Language	English
Handle URL	https://hdl.handle.net/11094/85488
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.3103314
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.3103314.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2009, 94(12), p. 122905
DC.title	Systematic study on work-function-shift in metal/Hf-based high-k gate stacks
DC.creator	Kita, Yuki
	Yoshida, Shinichi
	Hosoi, Takuji
	Shimura, Takayoshi
	Shiraishi, Kenji
	Nara, Yasuo
	Yamada, Keisaku
	Watanabe, Heiji
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2009-03-23
DC.identifier	https://doi.org/10.1063/1.3103314
DC.description	Yuki Kita, Shinichi Yoshida, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, Keisaku Yamada and Heiji Watanabe , "Systematic study on work-function-shift in metal/Hf-based high-k gate stacks", Appl. Phys. Lett. 94, 122905 (2009) https://doi.org/10.1063/1.3103314.
DCTERMS.abstract	Change in the work function (WF) of the gate electrode material caused by the contact with Hf-based high- k gate dielectrics was investigated by means of the flat-band voltage (V_{fb}) shift in capacitance-voltage curves, and the interface dipole, which modifies the WF, was characterized by x-ray photoelectron spectroscopy. We observed a negative V_{fb} shift and corresponding interface dipole, which suggest the formation of oxygen vacancy (V_O) in the Hf-based oxides. In contrast, we observed an opposite (positive) V_{fb} shift and interface dipole when Au electrodes were formed on cleaned Hf-based dielectrics. This indicates that Au-Hf bond hybridization at the Au/HfSiON interface also causes effective WF modulation, as theoretically predicted by Shiraishi et al. (Tech. - Dig. Int. Electron Devices Meet. 2005, 43).
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. and may be found at https://doi.org/10.1063/1.3103314.
DC.format	85488
citation_title	Systematic study on work-function-shift in metal/Hf-based high-k gate stacks
citation_author	Kita, Yuki
	Yoshida, Shinichi
	Hosoi, Takuji
	Shimura, Takayoshi
	Shiraishi, Kenji
	Nara, Yasuo
	Yamada, Keisaku
	Watanabe, Heiji
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2009-03-23
citation_journal_title	Applied Physics Letters
citation_volume	94
citation_issue	12
citation_firstpage	122905
citation_doi	https://doi.org/10.1063/1.3103314
citation_public_url	https://hdl.handle.net/11094/85488

Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

Link to primary information

Item Information

Show details