Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining

Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

doi:https://doi.org/10.1063/1.2766836

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining

Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu et al.

Review of Scientific Instruments, 2007, 78(8), 086102

Number of Access:545（2025-10-08 09:42 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/86975

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Title	Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining
Creator	NRID 1000040252598 1000040252598 ORCID 0000-0002-1767-922X 0000-0002-1767-922X researchmap permalink read0042804 read0042804 Scopus Author ID 7402344818 7402344818 CreatorName Sano, Yasuhisa
	NRID 1000060240074 1000060240074 researchmap permalink read0014013 read0014013 Scopus Author ID 7201754767 7201754767 CreatorName Yamamura, Kazuya
	NRID 1000030362651 1000030362651 CreatorName Mimura, Hidekazu
	NRID 1000010174575 1000010174575 researchmap permalink yamauchikazuto yamauchikazuto Scopus Author ID 7801509680 7801509680 CreatorName Yamauchi, Kazuto
	NRID 1000000029125 1000000029125 CreatorName Mori, Yuzo
Description	Yasuhisa Sano, Kazuya Yamamura, Hidekazu Mimura, Kazuto Yamauchi, and Yuzo Mori, "Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining", Review of Scientific Instruments 78(8), 086102 (2007) https://doi.org/10.1063/1.2766836.
Abstract	Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5±4.7 nm was successfully thinned and made uniform at 7.5±1.5 nm. © 2007 American Institute of Physics.
Publisher	American Institute of Physics
Source Title	Review of Scientific Instruments
Volume (Issue)	78(8)
Page	086102
Date of Issued	2007-08-07
Language	English
Handle URL	https://hdl.handle.net/11094/86975
PISSN	00346748
eISSN	10897623
NCID	AA00817730
NCID	AA12442307
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.2766836
Relation.isIdenticalTo	PMID 17764362
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Review of Scientific Instruments 78(8), 086102 (2007) and may be found at https://doi.org/10.1063/1.2766836.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Review of Scientific Instruments. 2007, 78(8), p. 086102
DC.title	Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining
DC.creator	Sano, Yasuhisa
	Yamamura, Kazuya
	Mimura, Hidekazu
	Yamauchi, Kazuto
	Mori, Yuzo
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2007-08-07
DC.identifier	https://doi.org/10.1063/1.2766836
DC.description	Yasuhisa Sano, Kazuya Yamamura, Hidekazu Mimura, Kazuto Yamauchi, and Yuzo Mori, "Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining", Review of Scientific Instruments 78(8), 086102 (2007) https://doi.org/10.1063/1.2766836.
DCTERMS.abstract	Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5±4.7 nm was successfully thinned and made uniform at 7.5±1.5 nm. © 2007 American Institute of Physics.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Review of Scientific Instruments 78(8), 086102 (2007) and may be found at https://doi.org/10.1063/1.2766836.
DC.format	86975
citation_title	Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining
citation_author	Sano, Yasuhisa
	Yamamura, Kazuya
	Mimura, Hidekazu
	Yamauchi, Kazuto
	Mori, Yuzo
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2007-08-07
citation_journal_title	Review of Scientific Instruments
citation_volume	78
citation_issue	8
citation_firstpage	086102
citation_doi	https://doi.org/10.1063/1.2766836
citation_pmid	17764362
citation_public_url	https://hdl.handle.net/11094/86975

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining

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