Reduction of interface and oxide traps in SiO₂/GaN MOS structures by oxygen and forming gas annealing

Mikake, Bunichiro; Kobayashi, Takuma; Mizobata, Hidetoshi; Nozaki, Mikito; Shimura, Takayoshi; Watanabe, Heiji

doi:https://doi.org/10.35848/1882-0786/acc1bd

Reduction of interface and oxide traps in SiO₂/GaN MOS structures by oxygen and forming gas annealing

Mikake, Bunichiro; Kobayashi, Takuma; Mizobata, Hidetoshi et al.

Applied Physics Express, 2023, 16(3), 031004

Number of Access:672（2025-08-19 00:54 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/90756

Link to primary information

File	Format	Terms of use	Size	Views	Date.Available	Description	information
APEX_16_3_031004	pdf	None	813 KB	56	2024.03.20

Creative Commons : Attribution - NonCommercial - NoDerivatives

Item Information

Output File Export EndNote Basic Export Mendeley

Title	Reduction of interface and oxide traps in SiO₂/GaN MOS structures by oxygen and forming gas annealing
Creator	CreatorName Mikake, Bunichiro
	NRID 1000020827711 1000020827711 ORCID 0000-0002-2755-5079 0000-0002-2755-5079 researchmap permalink takumakobayashi takumakobayashi Scopus Author ID 57203742549 57203742549 CreatorName Kobayashi, Takuma
	CreatorName Mizobata, Hidetoshi
	NRID 1000090646217 1000090646217 CreatorName Nozaki, Mikito
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Description	This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/acc1bd.
Abstract	The effect of post-deposition annealing on the electrical characteristics of SiO₂/GaN MOS devices was investigated. While the key to the improvement was using oxygen annealing to form an interfacial GaOx layer and forming gas annealing to passivate the remaining defects, caution must be taken not to produce a fixed charge through reduction of the GaOx layer. By growing the GaOx layer with oxygen annealing at 800 ℃ and performing forming gas annealing at a low temperature of 200 ℃, it became possible to suppress the reduction of GaOx and to reduce the interface traps, oxide traps, and fixed charge simultaneously.
Publisher	IOP Publishing
Source Title	Applied Physics Express
Volume (Issue)	16(3)
Page	031004
Date of Issued	2023-03-20
Handle URL	https://hdl.handle.net/11094/90756
PISSN	18820778
eISSN	18820786
NCID	AA12295133
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.35848/1882-0786/acc1bd
Access Rights	open access
CopyRight	This Accepted Manuscript is available for reuse under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License after the 12 month embargo period provided that all the terms of the licence are adhered to.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Express. 2023, 16(3), p. 031004
DC.title	Reduction of interface and oxide traps in SiO₂/GaN MOS structures by oxygen and forming gas annealing
DC.creator	Mikake, Bunichiro
	Kobayashi, Takuma
	Mizobata, Hidetoshi
	Nozaki, Mikito
	Shimura, Takayoshi
	Watanabe, Heiji
DC.publisher	IOP Publishing
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-03-20
DC.identifier	https://doi.org/10.35848/1882-0786/acc1bd
DC.description	This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/acc1bd.
DCTERMS.abstract	The effect of post-deposition annealing on the electrical characteristics of SiO₂/GaN MOS devices was investigated. While the key to the improvement was using oxygen annealing to form an interfacial GaOx layer and forming gas annealing to passivate the remaining defects, caution must be taken not to produce a fixed charge through reduction of the GaOx layer. By growing the GaOx layer with oxygen annealing at 800 ℃ and performing forming gas annealing at a low temperature of 200 ℃, it became possible to suppress the reduction of GaOx and to reduce the interface traps, oxide traps, and fixed charge simultaneously.
DC.rights	This Accepted Manuscript is available for reuse under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License after the 12 month embargo period provided that all the terms of the licence are adhered to.
DC.format	90756
citation_title	Reduction of interface and oxide traps in SiO₂/GaN MOS structures by oxygen and forming gas annealing
citation_author	Mikake, Bunichiro
	Kobayashi, Takuma
	Mizobata, Hidetoshi
	Nozaki, Mikito
	Shimura, Takayoshi
	Watanabe, Heiji
citation_publisher	IOP Publishing
citation_date	2023-03-20
citation_journal_title	Applied Physics Express
citation_volume	16
citation_issue	3
citation_firstpage	031004
citation_doi	https://doi.org/10.35848/1882-0786/acc1bd
citation_public_url	https://hdl.handle.net/11094/90756

Reduction of interface and oxide traps in SiO₂/GaN MOS structures by oxygen and forming gas annealing

Link to primary information

Item Information

Show details