Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Nakanuma, Takato; Tahara, Kosuke; Kutsuki, Katsuhiro; Shimura, Takayoshi; Watanabe, Heiji; Kobayashi, Takuma

doi:https://doi.org/10.1063/5.0166745

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Nakanuma, Takato; Tahara, Kosuke; Kutsuki, Katsuhiro et al.

Applied Physics Letters, 2023, 123(10), 102102

Number of Access:1,065（2025-08-18 18:47 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/92519

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Title	Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing
Creator	CreatorName Nakanuma, Takato
	CreatorName Tahara, Kosuke
	CreatorName Kutsuki, Katsuhiro
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
	NRID 1000020827711 1000020827711 ORCID 0000-0002-2755-5079 0000-0002-2755-5079 researchmap permalink takumakobayashi takumakobayashi Scopus Author ID 57203742549 57203742549 CreatorName Kobayashi, Takuma
Description	Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi; Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing. Appl. Phys. Lett. 4 September 2023; 123 (10): 102102. https://doi.org/10.1063/5.0166745
Abstract	Color centers in solids can serve as single photon emitters (SPEs) those are important in many quantum applications. Silicon carbide (SiC) is a promising host for color centers because of its well-established crystal growth and device technologies. Although color centers with extremely high brightness were found at the silicon dioxide (SiO2)/SiC interface, controlling their density and optical properties remains a challenge. In this study, we demonstrate control over the color centers at the SiO2/SiC interface by designing the oxidation and annealing conditions. We report that post-oxidation CO2 annealing has the ability to reduce the color centers at the interface and form well-isolated SPEs with bright emission. We also discuss the correlation between the color centers and electrically active defects.
Publisher	AIP Publishing
Source Title	Applied Physics Letters
Volume (Issue)	123(10)
Page	102102
Date of Issued	2023-09-06
Language	English
Handle URL	https://hdl.handle.net/11094/92519
PISSN	00036951
eISSN	10773118
NCID	AA00543431
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1063/5.0166745
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 4 September 2023; 123 (10): 102102 and may be found at https://doi.org/10.1063/5.0166745.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2023, 123(10), p. 102102
DC.title	Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing
DC.creator	Nakanuma, Takato
	Tahara, Kosuke
	Kutsuki, Katsuhiro
	Shimura, Takayoshi
	Watanabe, Heiji
	Kobayashi, Takuma
DC.publisher	AIP Publishing
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-09-06
DC.identifier	https://doi.org/10.1063/5.0166745
DC.description	Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi; Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing. Appl. Phys. Lett. 4 September 2023; 123 (10): 102102. https://doi.org/10.1063/5.0166745
DCTERMS.abstract	Color centers in solids can serve as single photon emitters (SPEs) those are important in many quantum applications. Silicon carbide (SiC) is a promising host for color centers because of its well-established crystal growth and device technologies. Although color centers with extremely high brightness were found at the silicon dioxide (SiO2)/SiC interface, controlling their density and optical properties remains a challenge. In this study, we demonstrate control over the color centers at the SiO2/SiC interface by designing the oxidation and annealing conditions. We report that post-oxidation CO2 annealing has the ability to reduce the color centers at the interface and form well-isolated SPEs with bright emission. We also discuss the correlation between the color centers and electrically active defects.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 4 September 2023; 123 (10): 102102 and may be found at https://doi.org/10.1063/5.0166745.
DC.format	92519
citation_title	Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing
citation_author	Nakanuma, Takato
	Tahara, Kosuke
	Kutsuki, Katsuhiro
	Shimura, Takayoshi
	Watanabe, Heiji
	Kobayashi, Takuma
citation_publisher	AIP Publishing
citation_language	English
citation_date	2023-09-06
citation_journal_title	Applied Physics Letters
citation_volume	123
citation_issue	10
citation_firstpage	102102
citation_doi	https://doi.org/10.1063/5.0166745
citation_public_url	https://hdl.handle.net/11094/92519

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

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