Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Ogawa, Shingo; Mizobata, Hidetoshi; Kobayashi, Takuma; Shimura, Takayoshi; Watanabe, Heiji

doi:https://doi.org/10.1063/5.0165894

Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Ogawa, Shingo; Mizobata, Hidetoshi; Kobayashi, Takuma et al.

Journal of Applied Physics, 2023, 134(9), 095704

Number of Access:622（2025-08-18 23:04 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/92520

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Title	Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy
Creator	CreatorName Ogawa, Shingo
	researchmap permalink 7000011979 7000011979 Scopus Author ID 57195445150 57195445150 CreatorName Mizobata, Hidetoshi
	NRID 1000020827711 1000020827711 ORCID 0000-0002-2755-5079 0000-0002-2755-5079 researchmap permalink takumakobayashi takumakobayashi Scopus Author ID 57203742549 57203742549 CreatorName Kobayashi, Takuma
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 CreatorName Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 CreatorName Watanabe, Heiji
Description	Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe; Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy. J. Appl. Phys. 7 September 2023; 134 (9): 095704. https://doi.org/10.1063/5.0165894
Abstract	The relationship between the electrical properties and the carrier trap properties of the SiO2/GaN metal–oxide–semiconductor (MOS) capacitors was investigated using electrical measurements and deep level transient spectroscopy (DLTS). The capacitance–voltage (C–V) measurement showed that the frequency dispersion of the C–V curves became smaller after an 800 °C annealing in O2 ambient. DLTS revealed that before the annealing, the interface trap states, in a broad energy range above the midgap of GaN, were detected with the higher interface state density at around 0.3 and 0.9 eV below the conduction band minimum (Ec) of GaN. Moreover, the oxide trap states were formed at around 0.1 eV below the Ec of GaN, plausibly indicating a slow electron trap with a tunneling process. Although both trap states affect the electrical reliability and insulating property of the SiO2/GaN MOS capacitors, they were found to drastically decrease after the annealing, leading to the improvement of the electrical properties.
Publisher	AIP Publishing
Source Title	Journal of Applied Physics
Volume (Issue)	134(9)
Page	095704
Date of Issued	2023-09-05
Language	English
Handle URL	https://hdl.handle.net/11094/92520
PISSN	00218979
eISSN	10897550
NCID	AA00693547
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1063/5.0165894
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Appl. Phys. 7 September 2023; 134 (9): 095704 and may be found at https://doi.org/10.1063/5.0165894.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Journal of Applied Physics. 2023, 134(9), p. 095704
DC.title	Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy
DC.creator	Ogawa, Shingo
	Mizobata, Hidetoshi
	Kobayashi, Takuma
	Shimura, Takayoshi
	Watanabe, Heiji
DC.publisher	AIP Publishing
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-09-05
DC.identifier	https://doi.org/10.1063/5.0165894
DC.description	Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe; Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy. J. Appl. Phys. 7 September 2023; 134 (9): 095704. https://doi.org/10.1063/5.0165894
DCTERMS.abstract	The relationship between the electrical properties and the carrier trap properties of the SiO2/GaN metal–oxide–semiconductor (MOS) capacitors was investigated using electrical measurements and deep level transient spectroscopy (DLTS). The capacitance–voltage (C–V) measurement showed that the frequency dispersion of the C–V curves became smaller after an 800 °C annealing in O2 ambient. DLTS revealed that before the annealing, the interface trap states, in a broad energy range above the midgap of GaN, were detected with the higher interface state density at around 0.3 and 0.9 eV below the conduction band minimum (Ec) of GaN. Moreover, the oxide trap states were formed at around 0.1 eV below the Ec of GaN, plausibly indicating a slow electron trap with a tunneling process. Although both trap states affect the electrical reliability and insulating property of the SiO2/GaN MOS capacitors, they were found to drastically decrease after the annealing, leading to the improvement of the electrical properties.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Appl. Phys. 7 September 2023; 134 (9): 095704 and may be found at https://doi.org/10.1063/5.0165894.
DC.format	92520
citation_title	Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy
citation_author	Ogawa, Shingo
	Mizobata, Hidetoshi
	Kobayashi, Takuma
	Shimura, Takayoshi
	Watanabe, Heiji
citation_publisher	AIP Publishing
citation_language	English
citation_date	2023-09-05
citation_journal_title	Journal of Applied Physics
citation_volume	134
citation_issue	9
citation_firstpage	095704
citation_doi	https://doi.org/10.1063/5.0165894
citation_public_url	https://hdl.handle.net/11094/92520

Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

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