Shallow defect layer formation as Cu gettering layer of ultra-thin Si chips using moderate-pressure (3.3 kPa) hydrogen plasma

Nomura, Toshimitsu; Kakiuchi, Hiroaki; Ohmi, Hiromasa

Journal of Applied Physics, 2023, 133(16), 163301

Number of Access:273（2025-10-08 11:21 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/93900

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Title
Shallow defect layer formation as Cu gettering layer of ultra-thin Si chips using moderate-pressure (3.3 kPa) hydrogen plasma
Creator
CreatorName
Nomura, Toshimitsu
NRID
1000010233660 1000010233660
researchmap permalink
read0014012 read0014012
Scopus Author ID
7005118424 7005118424
CreatorName
Kakiuchi, Hiroaki
NRID
1000000335382 1000000335382
researchmap permalink
read0076337 read0076337
Scopus Author ID
6701717242 6701717242
CreatorName
Ohmi, Hiromasa
Description
Nomura T., Kakiuchi H., Ohmi H.. Journal of Applied Physics. 133, 163301 (2023) https://doi.org/10.1063/5.0146215.
Abstract
In this study, we developed a shallow defect layer formation process using moderate-pressure H2 plasma at 3.3 kPa for an extrinsic gettering layer of ultra-thin Si chips aimed at three-dimensional integrated circuits. This process can be conducted in the presence of trivial amounts of air impurities (∼0.01 vol. %), thereby avoiding the use of high-vacuum equipment. We investigated the dependence of defect formation behavior on various processing parameters such as H2 flow rate, processing time, substrate temperature, and input power. It was determined that the absence of H2 gas flow was favorable for the defect layer formation because Si etching by hydrogen atoms was suppressed. A low Si temperature and high input power are desirable for a high defect density in the shallow surface region of the extrinsic gettering layer. When pulse-modulated plasma irradiation was attempted, the defect layer that formed became thinner and had a higher defect density than that obtained by continuous plasma, demonstrating good Cu gettering performance. Without using harmless chemicals, or high-cost equipment, a shallow gettering layer can be formed using inexpensive H2 gas.
Publisher
American Institute of Physics Inc.
Source Title
Journal of Applied Physics
Volume (Issue)
133(16)
Page
163301
Date of Issued
2023-04-28
Language
English
Handle URL
https://hdl.handle.net/11094/93900
PISSN
00218979
eISSN
10897550
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1063/5.0146215
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Nomura T., Kakiuchi H., Ohmi H.. Shallow defect layer formation as Cu gettering layer of ultra-thin Si chips using moderate-pressure (3.3 kPa) hydrogen plasma. Journal of Applied Physics 133, 163301 (2023) and may be found at https://doi.org/10.1063/5.0146215.
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Version of Record
Category
学術雑誌論文 Journal Article