Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

Kobayashi, Takuma; Koyanagi, Kaho; Hirai, Hirohisa et al.

Applied Physics Letters, 2024, 125(25), 252101

Number of Access:864（2025-08-15 01:09 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/98804

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Title
Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
Creator
NRID
1000020827711 1000020827711
ORCID
0000-0002-2755-5079 0000-0002-2755-5079
researchmap permalink
takumakobayashi takumakobayashi
Scopus Author ID
57203742549 57203742549
CreatorName
Kobayashi, Takuma
CreatorName
Koyanagi, Kaho
NRID
1000010828122 1000010828122
CreatorName
Hirai, Hirohisa
NRID
1000060783644 1000060783644
CreatorName
Sometani, Mitsuru
NRID
1000060450665 1000060450665
CreatorName
Okamoto, Mitsuo
NRID
1000090379115 1000090379115
ORCID
0000-0002-7916-3093 0000-0002-7916-3093
researchmap permalink
heijiw heijiw
Scopus Author ID
7410305922 7410305922
CreatorName
Watanabe, Heiji
Description
Kobayashi Takuma et al., Appl. Phys. Lett. 125, 252101 (2024) https://doi.org/10.1063/5.0245907.
Abstract
The impacts of gate voltage stress on the on-state characteristics of nitrided SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) were examined. A strong negative voltage stress at 300 °C induced a decrease in the channel mobility of the MOSFETs. This mobility decrease occurred along with an increase in the interface state density. Through MOS Hall effect measurements, we proposed a model in which the stress-induced interface states are located on the SiC side of the interface, close to where free electrons in the MOS channel are confined, thereby acting as a strong source of Coulomb scattering.
Publisher
AIP Publishing
Source Title
Applied Physics Letters
Volume (Issue)
125(25)
Page
252101
Date of Issued
2024-12-16
Language
English
Handle URL
https://hdl.handle.net/11094/98804
PISSN
00036951
eISSN
10773118
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.1063/5.0245907
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 16 December 2024; 125 (25): 252101 and may be found at https://doi.org/10.1063/5.0245907.
oaire:version
Accepted Manuscript
Category
学術雑誌論文 Journal Article