Formation of high-quality SiO₂/β-Ga₂O₃(001) MOS structures: The role of post-deposition annealing

Kobayashi, Takuma; Maeda, Kensei; Hara, Masahiro et al.

Applied Physics Letters, 2025, 126(1), 012108

Number of Access:712（2025-07-27 21:21 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/99315

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Title
Formation of high-quality SiO₂/β-Ga₂O₃(001) MOS structures: The role of post-deposition annealing
Creator
NRID
1000020827711 1000020827711
ORCID
0000-0002-2755-5079 0000-0002-2755-5079
researchmap permalink
takumakobayashi takumakobayashi
Scopus Author ID
57203742549 57203742549
CreatorName
Kobayashi, Takuma
CreatorName
Maeda, Kensei
researchmap permalink
masahirohara masahirohara
ORCID
0000-0001-9748-8011 0000-0001-9748-8011
CreatorName
Hara, Masahiro
NRID
1000090646217 1000090646217
ORCID
0009-0008-2368-1036 0009-0008-2368-1036
researchmap permalink
n0z n0z
CreatorName
Nozaki, Mikito
NRID
1000090379115 1000090379115
ORCID
0000-0002-7916-3093 0000-0002-7916-3093
researchmap permalink
heijiw heijiw
Scopus Author ID
7410305922 7410305922
CreatorName
Watanabe, Heiji
Description
Kobayashi Takuma et al., Appl. Phys. Lett. 126, 012108 (2025) https://doi.org/10.1063/5.0245289.
Abstract
We investigated the effect of post-deposition annealing on the electrical characteristics of SiO₂/β-Ga₂O₃(001) MOS structures. While oxygen annealing effectively improves the interface properties, it induces acceptor defects in Ga₂O₃, leading to a decrease in net donor density. With the combination of oxygen and nitrogen annealing, carrier compensation was suppressed, and a low interface state density of about 1 × 10¹¹ cm⁻² eV⁻¹ was obtained near the conduction band edge of Ga₂O₃. High immunity against positive gate bias stress was also confirmed.
Publisher
AIP Publishing
Source Title
Applied Physics Letters
Volume (Issue)
126(1)
Page
012108
Date of Issued
2025-01-06
Language
English
Handle URL
https://hdl.handle.net/11094/99315
PISSN
00036951
eISSN
10773118
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.1063/5.0245289
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 6 January 2025; 126 (1): 012108 and may be found at https://doi.org/10.1063/5.0245289.
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Accepted Manuscript
Category
学術雑誌論文 Journal Article